new product ss3h9 & SS3H10 vishay general semiconductor document number: 88752 revision: 19-may-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 high-voltage surface mount schottky rectifier high barrier technology for improved high tem perature performance features ? low profile package ? ideal for automated placement ? guardring for overvoltage protection ? low power losses, high efficiency ? low forward voltage drop ? low leakage current ? high surge capability ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? solder dip 260 c 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in low voltage high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications. mechanical data case: do-214ab (smc) epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix for consumer grade, meets jesd 201 class 1a whisker test, he3 suffix for high reliability grade (aec q101 qualified), meets jesd 201 class 2 whisker test polarity: color band denotes the cathode end primary characteristics i f(av) 3.0 a v rrm 90 v, 100 v i fsm 100 a v f 0.65 v i r 20 a t j max. 175 c do-214ab (smc) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol ss3h9 SS3H10 unit device marking code ms9 ms10 maximum repetitive peak reverse voltage v rrm 90 100 v working peak reverse voltage v rwm 90 100 v maximum dc blocking voltage v dc 90 100 v maximum average forward rectified current at: t l = 115 c i f(av) 3.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 100 a peak repetitive reverse surge current at t p = 2.0 s, 1 khz i rrm 1.0 a critical rate of rise of reverse voltage dv/dt 10 000 v/s operating junction and storage temperature range t j , t stg - 65 to + 175 c www.datasheet.co.kr datasheet pdf - http://www..net/
new product ss3h9 & SS3H10 vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88752 revision: 19-may-08 2 notes: (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width 40 ms note: (1) units mounted on p.c.b. with 0.55 x 0.55" (14 x 14 mm) copper pad areas note: (1) automotive grade aec q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol ss3h9 SS3H10 unit maximum instantaneous forward voltage (1) i f = 3.0 a i f = 3.0 a t j = 25 c t j = 125 c v f 0.8 0.65 v maximum reverse current at rated v r (2) t j = 25 c t j = 125 c i r 20 4 a ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol ss3h9 SS3H10 unit typical thermal resistance, junction to lead at t l = 25 c r jl 20 c/w typical thermal resistance, junction to ambient (1) r ja 50 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode ss3h9-e3/57t 0.235 57t 850 7" diameter plastic tape and reel ss3h9-e3/9at 0.235 9at 3500 13" diameter plastic tape and reel ss3h9he3/57t (1) 0.235 57t 850 7" diameter plastic tape and reel ss3h9he3/9at (1) 0.235 9at 3500 13" diameter plastic tape and reel figure 1. forward current derating curve 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 25 50 75 100 125 150 175 a v erage for w ard c u rrent (a) case temperat u re (c) figure 2. maximum non-repetitive peak forward surge current 0 25 50 75 100 125 110100 a v erage for w ard c u rrent (a) nu m b er of cycles at 60 hz www.datasheet.co.kr datasheet pdf - http://www..net/
new product ss3h9 & SS3H10 vishay general semiconductor document number: 88752 revision: 19-may-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instantaneous forward characteristics figure 4. typical reve rse characteristics instantaneo u s for w ard c u rrent (a) 100 10 1 0.1 0.01 0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 instantaneo u s for w ard v oltage ( v ) t j = 150 c t j = 125 c t j = 175 c t j = 25 c 10 20 30 40 50 60 70 8 090100 percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent ( a) 10 000 1000 100 10 1 0.1 0.01 t j = 150 c t j = 125 c t j = 175 c t j = 25 c figure 5. typical junction capacitance figure 6. typical transient thermal impedance 0.1 1 10 100 re v erse v oltage ( v ) j u nction capaci tance (pf) 1000 100 10 1 10 100 0.01 0.1 1 10 100 t - p u lse d u ration (s) transient impedance (c/ w ) 0.260 (6.60) 0.2 8 0 (7.11) 0.006 (0.152) 0.012 (0.305) 0.030 (0.76) 0.060 (1.52) 0.00 8 (0.2) 0.305 (7.75) 0.320 ( 8 .13) 0.220 (5.59) 0.246 (6.22) 0.079 (2.06) 0.103 (2.62) 0.114 (2.90) 0.126 (3.20) cathode band do-214ab (smc) 0.1 8 5 (4.69) max. 0.320 ref. 0.126 (3.20) mi n . 0.060 (1.52) mi n . mountin g pad layout 0 (0) www.datasheet.co.kr datasheet pdf - http://www..net/
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